Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. The Supertex 2N7000 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

Non-zero ohmic response when driven to saturation, as compared to a constant junction voltage drop in a bipolar junction transistor.circuits with external gate exposure require a protection gate resistor or other static discharge protection.susceptibility to cumulative damage from static discharge prior to installation.The main disadvantages of these FETs over bipolar transistors in switching are the following:

MOSFETs, unlike PN junction devices (such as LEDs) can be paralleled because resistance increases with temperature, although the quality of this load balance is largely dependent on the internal chemistry of each individual MOSFET in the circuit

consequently no current-limiting resistor is required in the gate input.

high input impedance of the insulated gate means almost no gate current is required.

In switching circuits, these FETs can be used much like bipolar junction transistors, but have some advantages: The 2N7000 has been referred to as a ' FETlington' and as an 'absolutely ideal hacker part.' The word 'FETlington' is a reference to the Darlington-transistor-like saturation characteristic.Ī typical use of these transistors is as a switch for moderate voltages and currents, including as drivers for small lamps, motors, and relays.

Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.).

2N7000 N Channel Enhancement Mode MOSFET Switch Circuit Basics CatalogĢN7000 Switching Waveforms and Test Circuit

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